events
William Shockley files the original patent for the grown-junction transistor, the first bipolar junction transistor.
Related Wikipedia articles
William Shockley
American physicist and engineer (1910–1989)
William Bradford Shockley was an American solid-state physicist, electrical engineer, and inventor. He was the manager of a research group at Bell Labs that included John Bardeen and Walter Brattain. The three scientists were jointly awarded the 1956 Nobel Prize in Physics "for…Source: Wikipedia (CC BY-SA)
Grown-junction transistor
Primitive type of bipolar junction transistor
The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948, six months after the first bipolar point-contact transistor. The first germanium prototypes were made in 1949. Bell Labs…Source: Wikipedia (CC BY-SA)
Bipolar junction transistor
Transistor that uses both electrons and holes as charge carriers
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small…Source: Wikipedia (CC BY-SA)